inchange semiconductor isc product specification isc websit e www.iscsemi.com isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor IRF1404 features drain current Ci d = 162a@ t c =25 drain source voltage- : v dss = 40v(min) static drain-source on-resistance : r ds(on) = 0.004 (max) fast switching description seventh generation hexfet ? power mosfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance p er silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliab le device for use in a wide variety of applications. . absolute maximum ratings(t a =25 ) thermal characteristics symbol parameter value unit v dss drain-source voltage 40 v v gs gate-source voltage-continuous 20 v i d drain current-continuous 162 a i dm drain current-single pluse 650 a p d total dissipation @t c =25 200 w t j max. operating junction temperature 175 t stg storage temperature -55~175 symbol parameter max unit r th j-c thermal resistance, junction to case 0.75 /w r th j-a thermal resistance, junction to ambient 62 /w
inchange semiconductor isc product specification isc websit e www.iscsemi.com isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor IRF1404 electrical characteristics t c =25 unless otherwise specified symbo l parameter conditions min type max unit v (br)dss drain-source breakdown voltage v gs = 0; i d = 0.25ma 40 v v gs (th ) gate threshold voltage v ds = v gs ; i d = 0.25ma 2 4 v r ds( on ) drain-source on-resistance v gs = 10v; i d = 95a 0.004 i gss gate-body leakage current v gs = 20v;v ds = 0 200 na i dss zero gate voltage drain current v ds = 40v; v gs = 0 20 a v sd forward on-voltage i s = 95a; v gs =0 1.3 v gfs forward transconductance v ds = 25v i d = 60a 106 s
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